NTE6403中文資料NTE數(shù)據(jù)手冊PDF規(guī)格書

Description:

The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages. The NTE6403 is specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control circuits.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Peak Recurrent Forward Current (PW = 10μs, Duty Cycle = 1, TA = +25°C) . . . . .1A

Peak Non–Recurrent Forward Current (PW = 10μs, TA = +25°C) . . . . . . . . .. . . . . . . .5A

Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .175mA

DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5mA

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . –65° to +150°C

Note 1. Derate linearly to zero at +125°C.

Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited by maximum power rating.