NTE5679中文資料NTE數(shù)據(jù)手冊PDF規(guī)格書

Description

The NTE5679 TRIAC may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the gate and MT1.

Electrical Characteristics: (All measurements are at TA = +25°C, 60Hz with a resistive load unless otherwise specified)

Repetitive Peak Blocking Voltage (Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

RMS On–State Current (Conduction Angle of 360°, TC = 0° to +125°C), IT(RMS) . . 40A

Peak Off–State Current (VDRM = 600V, Gate Open, Note 1), IDRM

TC = +25°C . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

TC = +125°C . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA

Peak One–Cycle Surge Current, ITSM

50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 335A

60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A

Non–Repetitive RMS Surge On–State Current for Fusing (IGT = 500mA, 8.3ms), I2t . . . . 664A2sec

Maximum DC Gate Trigger Current (VD = 12V, Quad I, II, III), IGT . . . . . . . . . . . . . . . 100mA

Maximum DC gate Trigger Voltage (VD = 12V, Quad I, II, III. Note 2), VGT

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 2.5V

TC = +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2V

Peak On–State Voltage (IT(RMS) = 40A, TC = +25°C, Note 1), VTM . . . . . . . . . . . 1.8V

DC Holding Current (gate Open, Note 1, Note 3), IH . . . . . . . . . . . . . . . . . . . 120mA

Peak Gate Trigger Current (Pulse Width ≤ 10μs), IGTM . . . . . . . . . . .. . . . . . . . 4A

Peak Gate Power Dissipation (Pulse Width ≤ 10μs), PGM . . . . . . . .. . . . . . . 40W

Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW

Minimum Critical Rate of Rise of Off–State Voltage (VDRM = 600V, Gate Open, Note 1), dv/dt

TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V/μs

TC = +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V/μs

Minimum Critical Rate of Rise of Commutation Voltage (Note 1), dv/dt(c)

(VDRM = 600V, IT(RMS) = 40A, Commutating di/dt = 21.6A/msec, Gate Unenergized) 4V/μs

Maximum Rate of Change of On–State Current (IGT = 200mA, Rise Time = 0.1μs), di/dt 150A/μs

Maximum Gate Controlled Turn–On Time (IGT = 500mA, Rise Time = 0.1μs), tgt . . . . . . 5μs

Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . 0° to +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . –20° to +125°C

Note 1. For either polarity of MT2 with reference to MT1 terminal.

Note 2. For either polarity of gate voltage (VGT) with reference to MT1 terminal.

Note 3. Initial On–State Current = 400mA (DC).