零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NTE294 | Silicon Complementary Transistors Audio Amplifier and Driver Description: TheNTE293(NPN)andNTE294(PNP)aresiliconcomplementarytransistorsinaGiantTO92typepackagedesignedforuseinlow–frequencypoweramplificationanddriveapplications. Features: ●LowCollector–EmitterSaturationVoltage | NTE NTE Electronics | NTE | |
MOSFET N−Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain?SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics | NTE | ||
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics | NTE | ||
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics | NTE | ||
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics | NTE | ||
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability ●TO220TypeIsolatedPackage | NTE NTE Electronics | NTE | ||
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability ●TO220TypeIsolatedPackage | NTE NTE Electronics | NTE | ||
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: LowStaticDrain–SourceONResistance ImprovedInductiveRuggedness FastSwitchingTimes LowInputCapacitance ExtendedSafeOperatingArea ImprovedHighTemperatureReliability TO220TypeIsolatedPackage AbsoluteMaximumRatings: Drain–SourceVoltage(Note | NTE NTE Electronics | NTE | ||
PlasticInfraredEmittingDiode PlasticInfraredEmittingDiodeOP290Series Description: Eachdeviceinthisseries,isagalliumaluminumarsenideinfraredLightEmittingDiode(LED)thatismoldedinanIR-transmissivepackagewithawavelengthcenteredat890nm,whichcloselymatchesthespectralresponseofsiliconphoto | Optek OPTEK Technologies | Optek | ||
GaAlAsPlasticInfraredEmittingDiode PlasticInfraredEmittingDiodeOP290Series Description: Eachdeviceinthisseries,isagalliumaluminumarsenideinfraredLightEmittingDiode(LED)thatismoldedinanIR-transmissivepackagewithawavelengthcenteredat890nm,whichcloselymatchesthespectralresponseofsiliconphoto | Optek OPTEK Technologies | Optek |
詳細(xì)參數(shù)
- 型號(hào):
NTE294
- 制造商:
NTE Electronics
- 功能描述:
TRANSISTOR PNP SILICON 60V IC=1A GIANT TO-92 CASE AUDIO AMP & DRIVER COMP'L TO N
- 功能描述:
Bulk
- 功能描述:
BIPOLAR TRANSISTOR PNP -50V TO-92
- 功能描述:
T-PNP- SI-AF POPD .75 W
- 功能描述:
BIPOLAR TRANSISTOR, PNP, -50V TO-92; Transistor
- Polarity:
PNP; Collector Emitter Voltage
- V(br)ceo:
50V; Transition Frequency Typ
- ft:
200MHz; Power Dissipation
- Pd:
1W; DC Collector
- Current:
-1A; DC Current Gain
- hFE:
120; No. of
- Pins:
3 ;RoHS
- Compliant:
Yes
- 功能描述:
Trans GP BJT PNP 50V 1A 3-Pin TO-92
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
新 |
46 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | ||||
2022+ |
42 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | ||||
24+ |
N/A |
69000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
NTE |
23+ |
39329 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | |||
NTE |
D16 |
Rohsv |
5000 |
全新原裝現(xiàn)貨 樣品可售 |
詢(xún)價(jià) | ||
NTE ELECTRONICS |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢(xún)價(jià) |
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