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NTD3055L104G

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN?ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecifica

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104G

12 Amps, 60 Volts, Logic Level N?Channel DPAK

Features ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecification ?LowerDiodeReverseRecoveryTime ?LowerReverseRecoveryStoredCharge ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?Converters ?PowerMotorControls ?BridgeCircuit

ETCList of Unclassifed Manufacturers

未分類制造商

NTD3055L104G

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

NTD3055L104G

Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104G

12 Amps, 60 Volts, Logic Level N??hannel DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104G

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

3055L104

60VN-ChannelMOSFET

Features ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecification ?LowerDiodeReverseRecoveryTime ?LowerReverseRecoveryStoredCharge

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

NTD3055L104

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=104mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTD3055L104

12Amps,60Volts,LogicLevelN?ChannelDPAK

Features ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecification ?LowerDiodeReverseRecoveryTime ?LowerReverseRecoveryStoredCharge ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?Converters ?PowerMotorControls ?BridgeCircuit

ETCList of Unclassifed Manufacturers

未分類制造商

NTD3055L104

12Amps,60Volts,LogicLevelN??hannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104

PowerMOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN?ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecifica

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTDV3055L104

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=104mΩ(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTDV3055L104

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NTD3055L104G

  • 功能描述：

    MOSFET 60V 12A N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
30432
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
 詢價(jià)
ON
23+
TO-252
6000
詢價(jià)
ON/進(jìn)口
2405+
TO-252
4475
只有全新原裝正品
 詢價(jià)
ON(安森美)
23+
13185
公司只做原裝正品,假一賠十
 詢價(jià)
ON
23+
TO-252
2500
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
ON
23+
DPAK
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
ON
24+
DPAK4LEADSingleG
8866
詢價(jià)
ON
1716+
DPAK(TO-252
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
ON
17+
DPAK(TO-252
30000
只做全新進(jìn)口原裝,現(xiàn)貨庫存
 詢價(jià)
ON
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
更多NTD3055L104G供應(yīng)商 更新時(shí)間2025-1-16 15:32:00

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