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NTC040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTBG040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTHL040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVBG040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVHL040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte

ONSEMION Semiconductor

安森美半導體安森美半導體公司

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GRACE 0603NTC105J NTCG164QH105
+
TDK Chip NTC thermistor
400000
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KR
23+
R0603
89630
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6000
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19
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4000
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更多NTC040N120SC1_V01供應商 更新時間2025-2-26 14:00:00

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