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NTB30N20

Power MOSFET 30 Amps, 200 Volts N??hannel Enhancement??ode D2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB30N20

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB30N20G

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB30N20T4

Power MOSFET 30 Amps, 200 Volts N??hannel Enhancement??ode D2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB30N20T4

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB30N20T4G

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP30N20

PowerMOSFET30Amps,200VoltsN-ChannelEnhancement?ModeTO-220

Features ?Source?to?DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode ?AvalancheEnergySpecified ?IDSSandRDS(on)SpecifiedatElevatedTemperature ?Pb?FreePackageisAvailable Applications ?PWMMotorControls ?PowerSupplies ?Converters

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP30N20

PowerMOSFET30Amps,200Volts

N?ChannelEnhancement?ModeTO?220 30AMPERES200VOLTS68m@VGS=10V(Typ) Features ?Source?to?DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode ?AvalancheEnergySpecified ?IDSSandRDS(on)SpecifiedatElevatedTemperature ?Pb?FreePackageisAvail

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP30N20G

PowerMOSFET30Amps,200VoltsN-ChannelEnhancement?ModeTO-220

Features ?Source?to?DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode ?AvalancheEnergySpecified ?IDSSandRDS(on)SpecifiedatElevatedTemperature ?Pb?FreePackageisAvailable Applications ?PWMMotorControls ?PowerSupplies ?Converters

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP30N20G

N??hannelEnhancement??odeTO??20

N?ChannelEnhancement?ModeTO?220 30AMPERES200VOLTS68m@VGS=10V(Typ) Features ?Source?to?DrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode ?AvalancheEnergySpecified ?IDSSandRDS(on)SpecifiedatElevatedTemperature ?Pb?FreePackageisAvail

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    NTB30N20

  • 功能描述:

    MOSFET 200V 30A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON/安森美
2024
TO-263
505348
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
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ON
23+
TO-263
35890
詢價(jià)
ON
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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ON
24+
TO-263
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
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MOT
6000
面議
19
DIP/SMD
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ON
20+
TO-263
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
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ON/安森美
23+
SOT-263
24190
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
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ON
1709+
SOT-263
32500
普通
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ON/安森美
21+
TO-263
30000
只做正品原裝現(xiàn)貨
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ON/安森美
21+
SOT-263
30000
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅
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更多NTB30N20供應(yīng)商 更新時(shí)間2025-1-24 16:18:00