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MBRA130LT3

SurfaceMountSchottkyPowerRectifier

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MBRA130LT3

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRA130LT3G

SurfaceMountSchottkyPowerRectifierSMAPowerSurfaceMountPackage

ThisdeviceemploystheSchottkyBarrierprincipleina metal?to?siliconpowerrectifier.Featuresepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforlow voltage,highfrequencyswitchingpowersupplies;freewheeling diodesandpolarityprotectiondiod

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRA130LT3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRA130LT3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRM130LT3

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier POWERMITE?PowerSurfaceMountPackage TheSchottkyPowermite?employstheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop?reversecurrenttradeoff.Theadvancedpackagingtechniquesprov

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRM130LT3

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRM130LT3G

SurfaceMountSchottkyPowerRectifier

SurfaceMountSchottkyPowerRectifier POWERMITE?PowerSurfaceMountPackage TheSchottkyPowermite?employstheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop?reversecurrenttradeoff.Theadvancedpackagingtechniquesprov

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRM130LT3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS130LT3

SchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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