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NP80N06PLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06PLG

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

NP80N06PLG-E1B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06PLG-E2B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06PLG-E1B-AY

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

NP80N06PLG-E1B-AYNote

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06PLG-E2B-AY

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

NP80N06PLG-E2B-AYNote

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PHB80N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP80N06LTissup

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    NP80N06PLG

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS/瑞薩
2022+
TO-263
800
原廠代理 終端免費提供樣品
 詢價
NEC
23+
TO-263
6000
原裝正品，支持實單
 詢價
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價
RENESAS/瑞薩
23+
TO-263
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
RENESAS/瑞薩
23+
NA/
53250
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
RENESAS/瑞薩
2022+
TO-263
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
RENESAS/瑞薩
22+
TO-263
12500
瑞薩全系列在售,終端可出樣品
 詢價
更多NP80N06PLG供應商 更新時間2025-2-21 16:45:00

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