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NP100P06PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP100P06PLG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP100P06PLG-E1-AY

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP100P06PLG_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PLG-E1-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PLG-E2-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PDG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    NP100P06PLG

  • 制造商：

    Renesas Electronics Corporation

供應商型號品牌批號封裝庫存備注價格
NEC
2024
TO-263
503161
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應商
 詢價
Renesas
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
ST/意法
23+
TO247
69820
終端可以免費供樣,支持BOM配單!
 詢價
RENESAS/瑞薩
22+
TO-263
28600
只做原裝正品現(xiàn)貨假一賠十一級代理
 詢價
NEC
23+
TO-263
10000
公司只做原裝正品
 詢價
RENESAS/瑞薩
TO-263
90000
公司集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-
 詢價
RENESAS/瑞薩
23+
TO-263
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
RENESAS/瑞薩
22+
TO-252
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-252
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
NEC
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多NP100P06PLG供應商 更新時間2024-11-8 16:18:00

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