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NNCD6.8C

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(150mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8D

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8DA

ELECTROSTATICDISCHARGENOISECLIPPINGDIODE2-PINSUPERMINIMOLD

ELECTROSTATICDISCHARGENOISECLIPPINGDIODE 2-PINSUPERMINIMOLD DESCRIPTION TheseproductsarethediodedevelopedforESD(ElectrostaticDischarge)noiseprotection.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingits

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NNCD6.8E

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8F

ELECTROSTATICDISCHARGENOISECLIPPINGDIODESDOUBLETYPE,ANODECOMMON3PINMINIMOLD

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(DOUBLETYPE,ANODECOMMON) 3PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofno

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8G

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5PINMINIMOLD

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE) 5PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceof

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8H

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION ThisproductseriesisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinter

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8J

ESDNOISECLIPPINGDIODE

DESCRIPTION TheseproductsareadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingitselfmostsuitableforexternalinterfacecircuitprotection.Theseproductsareca

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8LG

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8LH

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8MG

LOWCAPACITANCEHIGHESDTYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES5-PINMINIMOLD

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8PG

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUARTOTYPE:COMMONANODE5-PINMINIMOLD

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD DESCRIPTION TheNNCD6.8PGisadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediodeassuresane

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8PH

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUARTOTYPE:COMMONANODE5-PINSUPERSMALLMINIMOLD

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION TheNNCD6.8PHisadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8PL

5-PINSUPERSMALLMINIMOLDFLATLEADTYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUADTYPE:COMMONANODE

5-PINSUPERSMALLMINIMOLD(FLATLEADTYPE)ELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE) DESCRIPTION TheNNCD6.8PLisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC61000-4-2testonelectromagneticinterference(EM

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8RG

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUARTOTYPE:COMMONANODE5-PINMINIMOLD

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD DESCRIPTION TheNNCD6.8RGisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),th

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8RH

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD

LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION TheNNCD6.8RHisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC61000-4-2testonelectromagneticinterferen

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD6.8RL

5-PINSUPERSMALLMINIMOLD(FLATLEADTYPE)ELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE)

5-PINSUPERSMALLMINIMOLD(FLATLEADTYPE)ELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE) DESCRIPTION TheNNCD6.8RLisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC61000-4-2testonelectromagneticinterference(EM

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

PASMA6.8C

400Wsurgecapabilityat1ms

BWTECH

Bruckewell Technology LTD

PASMA6.8CA

400Wsurgecapabilityat1ms

BWTECH

Bruckewell Technology LTD

PDZ6.8B

Voltageregulatordiodes

DESCRIPTION Low-powergeneralpurposevoltageregulatordiodesinasmallplasticSMDSOD323package. FEATURES ?Totalpowerdissipation: max.400mW ?Smallplasticpackagesuitablefor surfacemounteddesign ?Widevarietyofvoltageranges: nom.2.4to36V(E24range).

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào):

    NNCD6.8C

  • 制造商:

    NEC

  • 制造商全稱(chēng):

    NEC

  • 功能描述:

    ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
22500
詢(xún)價(jià)
SEMITEH
24+
SOD-523
5000
只做原裝公司現(xiàn)貨
詢(xún)價(jià)
NEC
17+
SOT153
9888
只做原裝,現(xiàn)貨庫(kù)存
詢(xún)價(jià)
SEMITEH
23+
SOD-523
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
詢(xún)價(jià)
SEMITEH
22+
SOD-523
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
詢(xún)價(jià)
TINYSEMI
23+
SOD-523
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
SEMITEH
21+
SOD-523
10000
原裝現(xiàn)貨假一罰十
詢(xún)價(jià)
TINYSEMI
2022
SOD-523
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
詢(xún)價(jià)
Semitehelec
2021+
SOD-523
6000
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
詢(xún)價(jià)
TINYSEMI
24+23+
SOD-523
12580
16年現(xiàn)貨庫(kù)存供應(yīng)商終端BOM表可配單提供樣品
詢(xún)價(jià)
更多NNCD6.8C供應(yīng)商 更新時(shí)間2024-11-18 15:35:00