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D45H11G

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HD45H11

PNPEPITAXIALPLANARTRANSISTOR

Description TheHD45H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers.

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HI45H11

PNPEPITAXIALPLANARTRANSISTOR

Description TheHI45H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers.

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HJ45H11

PNPEPITAXIALPLANARTRANSISTOR

Description TheHJ45H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers.

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

KSE45H11

GeneralPurposePowerSwitchingApplications

GeneralPurposePowerSwitchingApplications ?LowCollector-EmitterSaturationVoltage:VCE(sat)=-1V(MAX)@-8A ?FastSwitchingSpeeds ?ComplementtoKSE44H

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSE45H11

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage :V(BR)CEO=-80V(Min) ·HighDCCurrentGain :hFE=60(Min)@(VCE=-1V,IC=-2A) ·LowSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-8A,IB=-0.4A) ·ComplementtoTypeKSE44H11 ·MinimumLot-to-Lotvariationsforrobustdevice performance

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KSE45H11TU

GeneralPurposePowerSwitchingApplications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSH45H11

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplicationsD-PAKforSurfaceMountApplications

Description General-purposepowerandswitchingsuchasoutputordriverstagesinapplicationsD-PAKforsurfacemountapplications. Features ?LeadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK,“-I”Suffix) ?ElectricallySimilartoPopularKSE45H ?FastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSH45H11

PNPEpitaxialSiliconTransistor

Description General-purposepowerandswitchingsuchasoutputordriverstagesinapplicationsD-PAKforsurfacemountapplications. Features ?LeadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK,“-I”Suffix) ?ElectricallySimilartoPopularKSE45H ?FastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSH45H11

iscSiliconPNPPowerTransistor

DESCRIPTION ?Leadformedforsurfacemountapplications(NOsuffix) ?Straightlead(IPAK,“-I”suffix) ?ElectricallysimilartopopularKSE45H ?Fastswitchingspeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NJVMJB45H11

  • 功能描述:

    兩極晶體管 - BJT BIP PNP 8A 80V TR

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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更多NJVMJB45H11供應(yīng)商 更新時(shí)間2025-4-30 14:50:00