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NIMD6302R2中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
NIMD6302R2規(guī)格書詳情
HDPlus devices are an advanced HDTMOS? series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while incorporating smart features. They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
This HDPlus device features an integrated Gate–to–Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring.
? ±3.5 Current Mirror Accuracy in Linear Region
? ±15 Current Mirror Accuracy in Low Current Saturation Region
? IDSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Current Sense FET
? ESD Protected on the Main and the Mirror FET
產(chǎn)品屬性
- 型號：
NIMD6302R2
- 功能描述：
MOSFET NFET S08D 30V .050R
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FC |
2011 |
2525 |
980 |
詢價 | |||
VARTA |
19+ |
DIP2 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FC |
2525 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
NETSWAP |
2402+ |
SMD |
8324 |
原裝正品!實單價優(yōu)! |
詢價 | ||
ON/安森美 |
2022+ |
SOP-8 |
30000 |
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
FC |
20+ |
電感器 |
682000 |
電感原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON/安森美 |
21+ |
SOP-8 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅發(fā)票 |
詢價 | ||
ON/安森美 |
2022+ |
SOP-8 |
10800 |
原廠代理 終端免費提供樣品 |
詢價 | ||
ONSEMICONDU |
24+ |
原封裝 |
37500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON |
20+ |
SOP8 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價 |
