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NESG2046M33

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES ?2differentbuilt-intransistors(NESG2046M33,2SC5800) Q1:HighgainSiGetransistor fT=18GHzTYP.,?S21e?2=13dBTYP.@VCE=1V,IC=15mA,f=2GHz Q2:Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2046M33

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

CEL

California Eastern Labs

NESG2046M33-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2046M33-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-T3-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES ?IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V ?3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2046M33-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2046M33-A

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

CEL

California Eastern Labs

詳細參數(shù)

  • 型號：

    NESG2046M33

  • 制造商：

    CEL

  • 制造商全稱：

    CEL

  • 功能描述：

    NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

供應(yīng)商型號品牌批號封裝庫存備注價格
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CEL
2022+
3 針 SuperMiniMold(M33)
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
RENESAS/瑞薩
23+
SOT-23
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
CEL
24+
3-SMD 扁平引線
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
NEC
17+
SOT343
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
24+
SOT-343SOT-323-4
87200
新進庫存/原裝
 詢價
NEC
23+
SOT343
6680
全新原裝優(yōu)勢
 詢價
NEC
16+
SOT343
10000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
RENESAS
19+
SOT343
87069
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
NEC
2020+
SOT343
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多NESG2046M33供應(yīng)商 更新時間2025-1-27 15:00:00

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