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NESG2031M05-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05

NPNSiGeRFTransistorforLowNoise,High-GainAmplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05

NPNSiGeHIGHFREQUENCYTRANSISTOR

CEL

California Eastern Labs

NESG2031M05

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    NESG2031M05-A

  • 功能描述：

    射頻硅鍺晶體管 NPN SiGe High Freq

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
CEL
24+
原廠原封
2500
只做原裝正品
 詢價
CEL
20+
射頻元件
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
LINEAR
23+
SOT23-6
5000
原裝正品,假一罰十
 詢價
NEC
24+
SOT-343SOT-323-4
12200
新進庫存/原裝
 詢價
NEC
2016+
SOT343
798
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NEC
24+
SOT343
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
NEC
2016+
SOT343
6528
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
NEC
23+
SOT343
12000
全新原裝優(yōu)勢
 詢價
NEC
24+
SOT343
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
NEC
6000
面議
19
SOT-343(SOT-
 詢價
更多NESG2031M05-A供應(yīng)商 更新時間2025-6-13 16:40:00

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