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NE713

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE713

GaAs MES FET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300L

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-L

GaAs MES FET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300M

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-M

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280μm GateLength:Lg=0.3μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE71300-M

GaAs MES FET

LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE71300N

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NE713

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
福特
24+
2680
全新原裝
 詢價(jià)
福特
2023+環(huán)保現(xiàn)貨
專業(yè)繼電器
6800
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
福特
2447
DIP
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
 詢價(jià)
NEC
6000
面議
19
DIP/SMD
 詢價(jià)
NEC
91+
N/A
2445
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
NEC
2023+
N/A
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價(jià)
NEC
23+
原裝正品現(xiàn)貨
10000
N/A
 詢價(jià)
NE72084-SL
37
37
詢價(jià)
NEC
2023+
702
詢價(jià)
NEC
24+
十字架
10
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多NE713供應(yīng)商 更新時(shí)間2025-3-17 15:30:00

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