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NE5520279A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2technology(ourWSigatelaterallydiffusedMOSFET)andhousedinasurfacemountpackage

CEL

California Eastern Labs

NE5520279A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE5520279A-T1

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1-A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2technology(ourWSigatelaterallydiffusedMOSFET)andhousedinasurfacemountpackage

CEL

California Eastern Labs

NE5520279A-T1

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE5520279A-EVPW04

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NE5520279A

CEL

California Eastern Labs

詳細參數(shù)

  • 型號：

    NE5520279A

  • 功能描述：

    射頻MOSFET電源晶體管 L/S Band Med Power

  • RoHS：

    否

  • 制造商：

    Freescale Semiconductor

  • 配置：

    Single

  • 頻率：

    1800 MHz to 2000 MHz

  • 增益：

    27 dB

  • 輸出功率：

    100 W

  • 封裝/箱體：

    NI-780-4

  • 封裝：

    Tray

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
13+
79A
36000
特價熱銷現(xiàn)貨庫存
 詢價
NEC
23+
79A
10000
全新原裝
 詢價
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
NEC
24+
79A
85
詢價
RENESAS
2020+
79A
959
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
CEL
17+
原廠原裝
4000
原裝正品
 詢價
NEC
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價
NEC
6000
面議
19
DIP/SMD
 詢價
RENESAS/瑞薩
1948+
79A
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
RENESAS
2020+
79A
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多NE5520279A供應(yīng)商 更新時間2024-10-27 9:06:00

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