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NE429M01-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES ?Superlownoisefigure&Highassociatedgain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE429M01-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforsecondandthirdstagelownoiseamplifiersinDBS,TVROandothercommercialsystems. NECsstringentquali

CEL

California Eastern Labs

詳細參數(shù)

  • 型號:

    NE429M01-T1

  • 功能描述:

    MOSFET Super Lo Noise HJFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多NE429M01-T1供應(yīng)商 更新時間2025-1-18 10:20:00