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NDP6030

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=46A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP6030

N-Channel Enhancement Mode Field Effect Transistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6030L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP6030PL

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NI6030E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

NIPCI-6030E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

NIPXI-6030E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

PBFR6030JP

VoltageRange16to28VCurrent60Ampere

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

PE6030

ShortingDustCapforBNCFemale

PASTERNACK

Pasternack Enterprises, Inc.

PH6030L

N-channelTrenchMOSlogiclevelFET

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PL6030JP

PolyimidePassivatedAutoRectifier

YENYOYenyo Technology Co., Ltd.

元耀科技元耀科技股份有限公司

PMEG6030ELP

60V,3AlowleakagecurrentSchottkybarrierrectifier

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG6030ELP-Q

60V,3AlowleakagecurrentSchottkybarrierrectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?ExtremelylowleakagecurrentIR=340nA ?Averageforwardcur

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG6030EP

3AlowVFMEGASchottkybarrierrectifier

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMEG6030EP

60V,3AlowVFSchottkybarrierrectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤3A ?Reversevoltage:VR≤6

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG6030EP-Q

60V,3AlowVFSchottkybarrierrectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤3A ?Reversevoltage:VR≤6

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG6030ETP

High-temperature60V,3ASchottkybarrierrectifier

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    NDP6030

  • 功能描述：

    MOSFET DISC BY MFG 2/02

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-220
28610
詢價
FAIRCHILD
24+
原廠封裝
3179
原裝現(xiàn)貨假一罰十
 詢價
FSC
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
FSC
2020+
TO-220
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
6000
面議
19
DIP/SMD
 詢價
KA
23+
TO-220
10000
公司只做原裝正品
 詢價
KA
22+
TO-220
6000
十年配單,只做原裝
 詢價
KA
23+
TO-220
6000
原裝正品，支持實單
 詢價
FSC
2023+
TO-220
5800
進(jìn)口原裝,現(xiàn)貨熱賣
 詢價
更多NDP6030供應(yīng)商 更新時間2025-1-10 17:23:00

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