NDB710AE中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
NDB710AE規(guī)格書詳情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042W.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in2) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
產(chǎn)品屬性
- 型號(hào)：
NDB710AE
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NS |
23+ |
原裝正品現(xiàn)貨 |
10000 |
TO-262 |
詢價(jià) | ||
NS |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
HARRIS/哈里斯 |
23+ |
D2PAK |
25600 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
NATIONAL/TI |
22+ |
SOT-263 |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NSC |
05+ |
原廠原裝 |
1651 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
24+ |
3000 |
公司存貨 |
詢價(jià) | ||||
NS |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
NS |
21+ |
TO-262 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
MOT/ON |
23+ |
TO- |
10000 |
公司只做原裝正品 |
詢價(jià) |
