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NCE60R900I

N-Channel Super Junction Power MOSFET ll

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

60R900P

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R900P

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R900PRH

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R900PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD60R900QRH

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD60R900QRH

Lowpowerlossbyhighspeedswitchingandlowon-resistance

MGCHIP

MagnaChip Semiconductor.

MMIS60R900P

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R900PTH

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R900PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NCE
2017+
TO-251
13685
深圳倉(cāng)庫(kù)現(xiàn)貨價(jià)格優(yōu)
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新潔能
19+
TO-251
75000
NCE正規(guī)代理商只做原裝現(xiàn)貨優(yōu)勢(shì)
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NCE
20+
TO-251
15800
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NCE/新潔能
2022+
TO-251
50000
原廠代理 終端免費(fèi)提供樣品
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NCE/新潔能
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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NCE
19+
TO-252
86648
原廠代理渠道,每一顆芯片都可追溯原廠；
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NCE
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
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NCE
TO-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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NCE/新潔能
23+
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22000
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 詢價(jià)
NCE
23+
TO-252
6000
原裝正品，支持實(shí)單
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更多NCE60R900I供應(yīng)商 更新時(shí)間2025-1-26 13:38:00

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