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NCE0106AR

Marking：NCE0106AR；Package：SOT-223-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0106ARusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=100V,ID=6A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE0106R

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NCE0106R

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE0106Z

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

OFM-0106

10WUltraminiatureOpenFrameSwitchingPowerSupplies

ASTRODYNEAstrodyne Corporation

天成達天成達(昆山)電子有限公司

OFM-0106M

10WUltraminiatureOpenFrameSwitchingPowerSupplies

ASTRODYNEAstrodyne Corporation

天成達天成達(昆山)電子有限公司

P0106

LOWPROFILESELF-LEADEDPOWERINDUCTORSDesignedforPCMCIAApplications

pulse

Pulse A Technitrol Company

QPA0106

1.0–6.0GHz18WGaNPowerAmplifier

KeyFeatures ?FrequencyRange:1–6GHz ?PSAT:42.7dBm(PIN=19dBm) ?PAE:>40(PIN=19dBm) ?PowerGain:24dB(PIN=19dBm) ?SmallSignalGain:>31dB ?Bias:VD=22V,IDQ=1022mA ?PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please

QORVO

Qorvo, Inc

QPA0106EVB

1.0–6.0GHz18WGaNPowerAmplifier

KeyFeatures ?FrequencyRange:1–6GHz ?PSAT:42.7dBm(PIN=19dBm) ?PAE:>40(PIN=19dBm) ?PowerGain:24dB(PIN=19dBm) ?SmallSignalGain:>31dB ?Bias:VD=22V,IDQ=1022mA ?PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please

QORVO

Qorvo, Inc

RA0106A

RectifierAssembly

SSDI

Solid States Devices, Inc

RC0106B

RECTIFIER

SSDI

Solid States Devices, Inc

RD0106T

LowVF??High-SpeedSwitchingDiode

DiffusedJunctionSiliconDiode Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance

SANYOSanyo Semicon Device

三洋三洋電機株式會社

RD0106T

PlanarUltrafastRectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RD0106T-H

PlanarUltrafastRectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RD0106T-H

DiffusedJunctionSiliconDiodeLowVF.High-SpeedSwitchingDiode

SANYOSanyo Semicon Device

三洋三洋電機株式會社

RD0106T-TL-H

DiffusedJunctionSiliconDiodeLowVF.High-SpeedSwitchingDiode

SANYOSanyo Semicon Device

三洋三洋電機株式會社

RD0106T-TL-H

PlanarUltrafastRectifier

PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RI-TRP-0106

MOUNT-ON-METALTRANSPONDERNumberingAccordingtoEN14803forWasteManagementApplications

TI1Texas Instruments

德州儀器

RI-TRP-0106

MOUNT-ON-METALTRANSPONDERNumberingAccordingtoEN14803forWasteManagementApplications

TITexas Instruments

德州儀器美國德州儀器公司

SA0106

5~7.5WattsSwitchingAdapter

BOTHHAND

Bothhand USA

供應(yīng)商型號品牌批號封裝庫存備注價格
NCE/新潔能
24+
SOT-223-3L
100000
NCE原裝正品、優(yōu)勢供應(yīng)
 詢價
NCE POWER
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
NCE/新潔能
23+
SOT-223
360000
交期準(zhǔn)時服務(wù)周到
 詢價
NCE/新潔能
23+
TO-92
21500
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NCE
19+
SOT-223
86537
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
NCE
18+
SOT-223
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
NCE
1822+
SOT-223
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NCEPOWER
23+
SOT-223
113121
原裝正品現(xiàn)貨
 詢價
NCE
18+
SOT-223
41200
原裝正品,現(xiàn)貨特價
 詢價
NCEPOWER
19+ROHS
SOT-223
180000
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
 詢價
更多NCE0106AR供應(yīng)商 更新時間2025-1-16 9:02:00

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