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NAND512W3A2BZA6E集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

NAND512W3A2BZA6E
廠商型號(hào)

NAND512W3A2BZA6E

參數(shù)屬性

NAND512W3A2BZA6E 封裝/外殼為63-VFBGA;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
IC FLSH 512MBIT PARALLEL 63VFBGA

封裝外殼

63-VFBGA

文件大小

916.59 Kbytes

頁(yè)面數(shù)量

57 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

原廠下載下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-23 23:01:00

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NAND512W3A2BZA6E規(guī)格書詳情

NAND512W3A2BZA6E屬于集成電路(IC)的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的NAND512W3A2BZA6E存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

產(chǎn)品屬性

更多
  • 產(chǎn)品編號(hào):

    NAND512W3A2BZA6E

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    閃存 - NAND

  • 存儲(chǔ)容量:

    512Mb(64M x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁(yè):

    50ns

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    63-VFBGA

  • 供應(yīng)商器件封裝:

    63-VFBGA(8.5x15)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法
24+
NA/
1250
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
ST
2016+
BGA
8880
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
ST
BGA
22
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
ST
24+
BGA
8500
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
ST(意法)
23+
15000
專業(yè)幫助客戶找貨 配單,誠(chéng)信可靠!
詢價(jià)
ST
24+
BGA
23000
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
STMicroelectronics
21+
48-TFBGA,CSPBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
詢價(jià)
ST/意法
22+
BGA
10000
只做原裝現(xiàn)貨假一賠十
詢價(jià)
ST/意法
24+
BGA
22055
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價(jià)