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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
MWP-608	文件：567.84 Kbytes Page：1 Pages	104W Triple Output Switching Power Supply	MEANWELLMean Well Enterprises Co., Ltd. 明緯電子明緯（廣州）電子有限公司	MEANWELL
NDB608A	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDB608A	文件：306.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NDB608AE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDB608AE	文件：306.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NDB608B	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDB608B	文件：306.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NDB608BE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDB608BE	文件：306.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NDP608A	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDP608A	文件：296.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NDP608AE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDP608AE	文件：296.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NDP608B	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDP608B	文件：296.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
NDP608BE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
NDP608BE	文件：296.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
OPB608	文件：311.63 Kbytes Page：9 Pages	ReflectiveObjectSensor Description TheOPB608consistsofaninfraredemittingdiodeandanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing. Features ?Phototransistoroutput ?Unfocusedforsensingdiffusesurface ?Lowcostplastichousing ?Enhancedsignal	Optek OPTEK Technologies	Optek
OPB608A	文件：223.73 Kbytes Page：2 Pages	REFLECTIVEOBJECTSENSORS TheOPB608isareflectiveswitchthatconsistofaninfraredemittingdevice(LEDorVCSEL)andanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing.Boththeemittingdeviceandphototransistorareencapsulatedinavisiblefilteringepoxyex	Optek OPTEK Technologies	Optek
OPB608A	文件：311.63 Kbytes Page：9 Pages	ReflectiveObjectSensor Description TheOPB608consistsofaninfraredemittingdiodeandanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing. Features ?Phototransistoroutput ?Unfocusedforsensingdiffusesurface ?Lowcostplastichousing ?Enhancedsignal	Optek OPTEK Technologies	Optek

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詳細參數(shù)

型號：
MWP-608
制造商：
MEANWELL
制造商全稱：
Mean Well Enterprises Co., Ltd.
功能描述：
104W Triple Output Switching Power Supply

供應商	型號	品牌	批號	封裝	庫存	備注	價格
千層芯半導體(深圳)有限公司	MWP-608	MINI	2018+	SMD	3600	MINI專營品牌全新原裝正品假一賠十	詢價
上海金慶電子技術有限公司	MWP9012-D8F-NC-WH	ElpacPowerSystems	新		5	全新原裝貨期兩周	詢價
上海市鑫鴻達電子	MWP9012-D8F-NC-WH	Elpac Power Systems	2022+		1	全新原裝貨期兩周	詢價
深圳市高捷芯城科技有限公司	MWPE0402D-R33J-T	Me-TECH(美臺高科)	23+	0402	7350	現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	MWPE0805D-4R7K-T	METECH	23+		17357	原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市匯萊威科技有限公司	MWPH1005F1R0MT	SUNLORD/順絡	24+	1.1*0.6MM	68900	一站配齊原盒原包現(xiàn)貨朱S Q2355605126	詢價
深圳市航宇科工半導體有限公司	MW-pH101	WINSEN/煒盛科技	23+	NA	100000	全新原裝正品公司現(xiàn)貨可免費送樣可含稅可追溯-可BOM配	詢價
華富測量(深圳)傳感技術有限公司	MWPM7B12A120AX	原廠	2023+	模塊	600	專營模塊,繼電器,公司原裝現(xiàn)貨	詢價
艾睿國際（香港）有限公司	MWPR1024IZVHT	NXP(恩智浦)	2112+	-	105000	1300個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,	詢價
訊運(深圳/上海)電子有限公司	MWPR1024IZVHT	NXP(恩智浦)	2021+	-	499		詢價

更多MWP-608供應商更新時間2024-10-26 17:13:00

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