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MVDF1N05E中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

MVDF1N05E
廠商型號(hào)

MVDF1N05E

功能描述

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

文件大小

211.3 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-26 14:11:00

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MVDF1N05E規(guī)格書詳情

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain?to?source diode has a low reverse recovery time. These devices

are designed for use in low voltage, high speed switching applications

where power efficiency is important. Typical applications are dc?dc

converters, and power management in portable and battery powered

products such as computers, printers, cellular and cordless phones.

They can also be used for low voltage motor controls in mass storage

products such as disk drives and tape drives. The avalanche energy is

specified to eliminate the guesswork in designs where inductive loads

are switched and offer additional safety margin against unexpected

voltage transients.

Features

? Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

? Logic Level Gate Drive ? Can Be Driven by Logic ICs

? Miniature SO?8 Surface Mount Package ? Saves Board Space

? Diode Is Characterized for Use In Bridge Circuits

? Diode Exhibits High Speed

? Avalanche Energy Specified

? Mounting Information for SO?8 Package Provided

? IDSS Specified at Elevated Temperature

? This is a Pb?Free Device

? MVDF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

產(chǎn)品屬性

  • 型號(hào):

    MVDF1N05E

  • 功能描述:

    MOSFET N-CH 50V 2A 8-SOIC

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列

  • 系列:

    -

  • 產(chǎn)品目錄繪圖:

    8-SOIC Mosfet Package

  • 標(biāo)準(zhǔn)包裝:

    1

  • 系列:

    - FET

  • 型:

    2 個(gè) N 溝道(雙) FET

  • 特點(diǎn):

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    60V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    3A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    75 毫歐 @ 4.6A,10V Id 時(shí)的

  • Vgs(th)(最大):

    3V @ 250µA 閘電荷(Qg) @

  • Vgs:

    20nC @ 10V 輸入電容(Ciss) @

  • Vds:

    - 功率 -

  • 最大:

    1.4W

  • 安裝類型:

    表面貼裝

  • 封裝/外殼:

    PowerPAK? SO-8

  • 供應(yīng)商設(shè)備封裝:

    PowerPAK? SO-8

  • 包裝:

    Digi-Reel®

  • 產(chǎn)品目錄頁(yè)面:

    1664(CN2011-ZH PDF)

  • 其它名稱:

    SI7948DP-T1-GE3DKR

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