首頁(yè) >MURS360T3G-CUTTAPE>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountUltrafastPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ULTRAFASTRECTIFIERS3.0AMPERES200-600VOLTS SurfaceMountUltrafastPowerRectifiers ...employingstate–of–the–artepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforhighvoltage,highfrequencyrectification,orasfreewheelingandprotectiondiodes,insurfacemountapplicationswherecompact | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerRectifiers,Ultra-fastRecovery Thisseriesemploysthestate?of?the?artepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforhigh voltage,highfrequencyrectification,orasfreewheelingand protectiondiodes,insurfacemountapplicationswherecompactsize andweightarecriticalt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountUltrafastPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountUltrafastPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Trench-basedSchottkyRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Trench-basedSchottkyRectifier | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
SMC |
34137 |
只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
安森美 |
23+ |
SMC |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
安森美 |
SMC |
893993 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ON Semiconductor |
22+ |
NA |
2215 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
ON |
22+23+ |
DO214AB(SMC) |
25692 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
SMC-2 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
22+ |
SMC |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
ON/安森美 |
23+ |
SMC-2 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
8135 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | |||
ON/安森美 |
2018+ |
8135 |
詢價(jià) |
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