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MURS115MG

Chip Silicon Rectifier

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

MVAM115

SILICONVARACTORDIODE

DESCRIPTION: TheASIMVAM115isaSiliconTuningVaractorDiode. FEATURESINCLUDE: ?15:1MinimumTuningRange ?Q-150Minimum

ASI

Advanced Semiconductor

MVAM115

SILICONTUNINGDIODES

SILICONTUNINGDIODES ...designedforelectronictuningofAMreceiversandhighcapacitance,hightuningratioapplications. ?HighCapacitanceRatio—CR=15(Min). MVAM108,115,125 ?GuaranteedDiodeCapacitance—Ct-440pF(Min)— 560pF(MnxVR-1.0VDc,f=1.0MHz,MVAIVI108,MVA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MZ115

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MZH115

LOGICINTEGRATEDCIRCUITSDTLFORNUMERICALCONTROLSYSTEMS

LOGICINTEGRATEDCIRCUITSDTLFORNUMERICALCONTROLSYSTEMS

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

N115

PolyurethaneAdhesive-BackBumpers

HeycoHeyco.

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NCP115

300mACMOSLowDropoutRegulator

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGRUS115

NeutralGroundingResistorSystem,NGRSERIES–US

Description High-resistancegroundingpreventsmanyoftheproblems thatareassociatedwithungroundedandsolidlygrounded electricaldistributionandutilizationsystems.High-resistance groundingcanlimitpoint-of-faultdamage,eliminatetransient overvoltages,reducethearc-flashhazar

Littelfuselittelfuse

力特力特公司

NSBC115TD

DualNPNBiasResistorTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

OHWG115

OHWGSeriesWiegandsensor

OHHALLSENSORNanjing Ouzhuo Technology Co., Ltd.

歐卓南京歐卓科技有限公司

P115

KNOBSANDDIALPLATES

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

P115

MINITACTORTM

Features ?UL508Recognizedandloadbreakratedfor1000vdcsystems ?Hermeticallysealedcontactor:ensuresmake/breakswitchingupto 1200Vdc ?Bestoptionfor:NEC690.11and690.12DCarcfaultinterruptingand rapidshutdownrequirements ?Small,lightweightandcosteffectivepatented

Sensata

Sensata Technologies, Inc.

PC115A

SILICONABRUPTTUNINGVARACTOR

ASI

Advanced Semiconductor

PD-115X-XXX

InGaAsPINPHOTODIODESPINPhotodiodewithMini-SizeTOPackage

OPTOWAY

Optoway Technology Inc

PDTA115E

PNPresistor-equippedtransistors;R1=100kW,R2=100kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA115E

PNPresistor-equippedtransistors;R1=100k廓,R2=100k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA115E

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115E_SERIES

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA115EE

PNPresistor-equippedtransistors;R1=100kW,R2=100kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA115EE

PNPresistor-equippedtransistors;R1=100k廓,R2=100k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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更多MURS115MG供應(yīng)商 更新時(shí)間2025-1-4 10:32:00