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MUR858

GLASS PASSIVATED SUPER FAST RECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Singlerectifierconstruction ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MUR858

GLASS PASSIVATED SUPER FAST RECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MUR858M2

GLASS PASSIVATED SUPER FAST RECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MZ858

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NSC858

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858D

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858D/A+

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858E

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858E/A+

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858N

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858N/A+

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858V

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NSC858V/A+

NSC858UniversalAsynchronousReceiver/Transmitter

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NTE858M

IntegratedCircuitDual,Low-NoiseJFET-InputOperationalAmplifier

Description: TheNTE858MandNTE858SMaredual,low–noiseJFETinputoperationalamplifierscombiningtwostate–of–the–artlineartechnologiesonasinglemonolithicintegratedcircuit.EachinternallycompensatedoperationalamplifierhaswellmatchedhighvoltageJFETinputdevicesforlo

NTE

NTE Electronics

NTE858SM

IntegratedCircuitDual,Low-NoiseJFET-InputOperationalAmplifier

Description: TheNTE858MandNTE858SMaredual,low–noiseJFETinputoperationalamplifierscombiningtwostate–of–the–artlineartechnologiesonasinglemonolithicintegratedcircuit.EachinternallycompensatedoperationalamplifierhaswellmatchedhighvoltageJFETinputdevicesforlo

NTE

NTE Electronics

OPA858

OPA814600-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features ?Widebandwidth: –Gain-bandwidthproduct:250MHz –Bandwidth(G=1V/V):600MHz –Large-signalbandwidth(2VPP):200MHz –Slewrate:750V/μs ?Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) ?Inputvoltagenois

TI1Texas Instruments

德州儀器

OPA858

OPA814600-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features ?Widebandwidth: –Gain-bandwidthproduct:250MHz –Bandwidth(G=1V/V):600MHz –Large-signalbandwidth(2VPP):200MHz –Slewrate:750V/μs ?Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) ?Inputvoltagenois

TITexas Instruments

德州儀器美國德州儀器公司

OPA858

5.5-GHzGainBandwidthProductDecompensated,FETInputAmplifier

TI1Texas Instruments

德州儀器

OPA858

OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features ?Widebandwidth: –Gain-bandwidthproduct:400MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):250MHz –Slewrate:1000V/μs ?Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) ?Inputvoltagenoi

TITexas Instruments

德州儀器美國德州儀器公司

OPA858

OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features ?Widebandwidth: –Gain-bandwidthproduct:390MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):245MHz –Slewrate:970V/μs ?Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:4μV/°C(maximum) ?Inputvoltagenoise:

TITexas Instruments

德州儀器美國德州儀器公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
5000
公司存貨
 詢價(jià)
GD
13CN
TO-220AC
3000
原廠直銷
 詢價(jià)
東芝
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
ON
23+
TO220
9526
詢價(jià)
ON
04+
TO-220
1000
全新原裝 絕對(duì)有貨
 詢價(jià)
ON
12+
TO-200
20000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
ON
23+
TO220-2
5000
原裝正品,假一罰十
 詢價(jià)
ON
2016+
TO-220
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品!
 詢價(jià)
IXYS
24+
模塊
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
ONS
24+
原廠封裝
1500
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多MUR858供應(yīng)商 更新時(shí)間2025-1-12 16:00:00

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