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MUR6030PL

60.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR6030PR

60.0AmpereHeatsinkDualDoublerPolarityUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR6030PT

UltraFastRecoveryDiodes

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

MUR6030PT

UltraFastRecoveryDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6030PT

UltraFastRecoveryDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6030PT

60.0Ampere,300VoltCommonCathodeFastRecoveryEpitaxialDiode

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR6030PT

Ultra-FastRecoveryDiodes30A*2FREDPt

Features ●AdoptFREDchip ●LowforwardVoltagedrop ●Fastreverserecoverytime ●Highfrequencyoperation ●Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ●Guardringforenhancedruggednessandlongterm reliability Typical

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MUR6030PT

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES PlasticMaterialhasULFlammability Classification94V-O LowPowerloss,HighEfficiency LowReverseLeakageCurrent SuperFastSwitching,HighEfficiency HighSurgeCurrentCapability FredChipPlanarConstruction

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽(yáng)電子三陽(yáng)電子有限公司

MUR6030PT

FastRecoveryEpiDiodes

Features Highfrequencyoperation Highsurgeforwardcurrentcapability Highpurity,hightemperatureepoxy enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongterm reliability Solderdip275℃max.7s,perJESD22 encapsulationfor 22-B106

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

MUR6030PT

UltrafastRectifier

FEATURES ·Guardingforovervoltageprotection ·Dualrectifierconstruction,positivecentertap ·Metalofsiliconrectifier,majoritycarrierconduction ·Lowforwardvoltage,highefficiency ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Uni

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MUR6030PT

60.0AmpereHeatsinkDualCommonCathodeUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR6030PTR

FastRecoveryEpiDiodes

Features Highfrequencyoperation Highsurgeforwardcurrentcapability Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongterm reliability Solderdip275℃max.7s,perJESD22-B106

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

MUR6030WT

ULTRAFASTPLASTICRECTIFIER

SMCSangdest Microelectronic (Nanjing) Co., Ltd

燒結(jié)金屬

NCE6030K

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6030Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=30A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NDB6030

N-ChannelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=46A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=52A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDB6030PL

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6030PL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

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23+
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370
正規(guī)渠道,只有原裝!
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TI
2022+
MSOP8
6000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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9907
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699839
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2023+
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8800
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89137
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426
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56000
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更多MUR6030PL供應(yīng)商 更新時(shí)間2025-1-17 10:17:00

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