首頁 >MUR410RLG>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

MUR410RLG

Switch-Mode Power Rectifiers

Thesestate?of?the?artdevicesareaseriesdesignedforusein switchingpowersupplies,invertersandasfreewheelingdiodes. Features ?Ultrafast25ns,50nsand75nsRecoveryTimes ?175°COperatingJunctionTemperature ?LowForwardVoltage ?LowLeakageCurrent ?HighTemperatureG

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MUR410RLG

SWITCHMODE TM Power Rectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MUR410RLG

SWITCHMODE Power Rectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MUR410RLG

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：DO-201AA，DO-27，軸向 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE GEN PURP 100V 4A DO201AD

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURC410

MURC405-MURC460UltrafastSiliconDie

SENSITRON

Sensitron

MURS410

SURFACEMOUNTSUPERFASTRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

MURS410

SurfaceMountRectifiers

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MURS410

SURFACEMOUNTRECTIFIERS

DSK

Diode Semiconductor Korea

MURS410

4.0ASURFACEMOUNTULTRAFASTDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

NBB-410

BiasSchemeforNBB-SeriesAmplifiers

Introduction RFMD’sNBB-seriesamplifiersaremonolithicintegratedcircuits(ICs)usingInGaP/GaAsHBTtechnology.TheNBB-seriesusesaDarlington-pairtransistorconfigurationwithbiasandfeedbackresistorsproperlyselectedtodeterminethegain,inputandoutputmatchandbias(bothvoltag

RFMD

RF Micro Devices

NDB410A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB410AE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB410B

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB410BE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP410A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP410A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    MUR410RLG

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 系列：

    SWITCHMODE?

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 二極管類型：

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io)：

    4A

  • 速度：

    快速恢復(fù) =< 500ns，> 200mA（Io）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    DO-201AA，DO-27，軸向

  • 供應(yīng)商器件封裝：

    軸向

  • 工作溫度 - 結(jié)：

    -65°C ~ 175°C

  • 描述：

    DIODE GEN PURP 100V 4A DO201AD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
12257
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
 詢價(jià)
ON
16+/17+
DO201AD
78000
渠道現(xiàn)貨庫存-原裝正品
 詢價(jià)
ON
24+
DO201AD
69000
詢價(jià)
ONSEMI
2022+
NA
815
原廠原裝
 詢價(jià)
ON/安森美
2410+
80000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價(jià)
ON(安森美)
23+
DO-201AA,DO-27,軸向
13761
公司只做原裝正品,假一賠十
 詢價(jià)
ON/安森美
23+
25850
新到現(xiàn)貨,只有原裝
 詢價(jià)
ON
2016+
DO-201AD
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品!
 詢價(jià)
ON
11+
309
原裝正品長(zhǎng)期供貨，如假包賠包換 徐小姐13714450367
 詢價(jià)
ON
23+
DO-201AD
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
更多MUR410RLG供應(yīng)商 更新時(shí)間2024-10-26 22:59:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多