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MTW45N10E

TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW45N10E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=35mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

45N10

N-Channel100-V(D-S)MOSFET

FEATURES TrenchFET??PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100%RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEB45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP45N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,44A,RDS(ON)=39mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

SPR45N10

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSP45N10

N-ChannelEnhancementModeMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

STB45N10L

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.028? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■LOWLEAKAGECURRENT ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD45N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STP45N10

N-CHANNEL100V-0.027ohm-45A-TO-220/TO-220FIPOWERMOSTRANSISTOR

N-CHANNEL100V-0.027?-45A-TO-220/TO-220FIPowerMOSTransistor ■TYPICALRDS(on)=0.027? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARAC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP45N10FI

N-CHANNEL100V-0.027ohm-45A-TO-220/TO-220FIPOWERMOSTRANSISTOR

N-CHANNEL100V-0.027?-45A-TO-220/TO-220FIPowerMOSTransistor ■TYPICALRDS(on)=0.027? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARAC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU45N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

WSF45N10G

N-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導(dǎo)體微碩半導(dǎo)體（深圳）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTW45N10E

  • 制造商：

    Rochester Electronics LLC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MOT
2020+
TO247
18600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
MOT
05+
TO-247
2500
原裝進(jìn)口
 詢價(jià)
MOTOROLA
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價(jià)
MOT
24+
N/A
6820
詢價(jià)
ON
23+
TO-247
6893
詢價(jià)
2017+
TO247
6528
只做原裝正品假一賠十!
 詢價(jià)
MOT
TO247
37526
只做原裝貨值得信賴
 詢價(jià)
MOT
2020+
TO247
120000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價(jià)
ON
23+
TO-247
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
MOT
22+23+
TO247
13767
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
更多MTW45N10E供應(yīng)商 更新時(shí)間2025-1-15 13:58:00

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