MTP55N06Z中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTP55N06Z規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Capability Specified at Elevated Temperature
? Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
? Low Stored Gate Charge for Efficient Switching
? Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
? ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
88009 |
詢價(jià) | |||
NJS |
2023+ |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | |||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
MOT |
05+ |
TO-220 |
3000 |
原裝進(jìn)口 |
詢價(jià) | ||
MOT |
8426 |
7 |
公司優(yōu)勢(shì)庫存 熱賣中! |
詢價(jià) | |||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
VB |
TO220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
CYSTECH/全宇昕 |
TSOP-6 |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
24+ |
N/A |
2000 |
詢價(jià) | ||||
ON |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) |