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MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB23P06E

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB23P06V

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTB23P06V

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB23P06V

TMOSPOWERFET23AMPERES60VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP23P06V

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP23P06V

TMOSPOWERFET23AMPERES60VOLTSRDS(on)=0.120OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ON
19+
TO-220
86189
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
ON/安森美
2022+
TO-220
25000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
ON/安森美
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
24+
N/A
5000
公司存貨
 詢價(jià)
ON
23+
TO-220
6893
詢價(jià)
ON
17+
TO220
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
MOT
06+
TO-220
3000
原裝庫存
 詢價(jià)
ON
2020+
TO-220
4500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
ON
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
MOT
22+23+
TO-220
15437
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
更多MTP23P06E供應(yīng)商 更新時(shí)間2025-2-2 16:12:00

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