MTP20N20E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTP20N20E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTP20N20E
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ONS |
23+ |
NA |
6000 |
原裝正品，支持實單 |
詢價 | ||
ON/安森美 |
18+ |
TO-220 |
12500 |
全新原裝正品,本司專業(yè)配單,大單小單都配 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220AB |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
ONS |
2016+ |
N/A |
6528 |
只做進口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
MOT |
06+ |
TO-220 |
3000 |
原裝 |
詢價 | ||
IR |
24+ |
TO 220 |
161090 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON |
23+ |
TO-220 |
6893 |
詢價 | |||
ONS |
NA |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
MOT |
24+ |
50 |
詢價 | ||||
ONS |
2020+ |
N/A |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
