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MTP10N40

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–ChannelEnhancement–ModeSiliconGate ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP10N40

Power Field Effect Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP10N40E

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–ChannelEnhancement–ModeSiliconGate ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP10N40E

N??hannel Enhancement??ode Silicon Gate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP10N40E

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTW10N40E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW10N40E

TMOSE-FETPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

NTB10N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB10N40

N??hannelPowerMOSFET

10AMPERES400VOLTSRDS(on)=500m? Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?Tig

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTP10N40

N??hannelPowerMOSFET

10AMPERES400VOLTSRDS(on)=500m? Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?Tig

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

P10N40HA

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHB10N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB10N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB10N40T

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHP10N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP10N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP10N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP10N60Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX10N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX10N40Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

SIF10N40E

N-CHANNELPOWERMOSFET

SISEMICShenzhen SI Semiconductors Co.,LTD.

深愛半導(dǎo)體深圳深愛半導(dǎo)體股份有限公司

SIHB10N40D

DSeriesPowerMOSFET

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    MTP10N40

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO 220
161089
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ON
24+
N/A
1850
詢價
ON
23+
TO-220
6893
詢價
MOT
06+
TO-220
3000
原裝庫存
 詢價
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
ON
2020+
TO-220
35000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
ON/安森美
23+
TO-220
10000
公司只做原裝正品
 詢價
ON/安森美
23+
TO-TO-220
15400
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MOTOLA
23+
2800
正品原裝貨價格低qq:2987726803
 詢價
ON
24+
TO-TO-220
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多MTP10N40供應(yīng)商 更新時間2024-12-25 14:20:00

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