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MTM10N100E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTV10N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTV10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTW10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTW10N100E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTY10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerEieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RM10N100LD

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures Vos=100Vl0=10A Rosin)

RECTRON

Rectron Semiconductor

SFF10N100B

10AMP/1000Volts1.2ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MOT
24+
N/A
1010
詢價(jià)
MOTOROLA
24+
TO-3
1100
原裝現(xiàn)貨假一罰十
 詢價(jià)
MOTOROLA
專業(yè)鐵帽
TO-3
1100
原裝鐵帽專營(yíng),代理渠道量大可訂貨
 詢價(jià)
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
MOTOROLA/摩托羅拉
23+
TO-3
15238
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
更多MTM10N100供應(yīng)商 更新時(shí)間2025-2-4 16:00:00

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