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MTD20N06HDL規(guī)格書詳情
HDTMOS E-FET? Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
? Available in Insertion Mount, Add –1 or 1 to Part Number
產(chǎn)品屬性
- 型號：
MTD20N06HDL
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail
- 功能描述：
MOSFET N LOGIC D-PAK
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
1822+ |
TO-252 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
ON |
24+ |
SOT252 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
ON/安森美 |
TO-252 |
207141 |
一級代理原裝正品,價格優(yōu)勢,支持實單! |
詢價 | |||
ON |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
ON SEMICONDUCTORS |
00+33 |
641 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
ON/安森美 |
22+ |
TO-252 |
17800 |
原裝正品 |
詢價 | ||
ON |
24+ |
SOT-252 |
13990 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON |
TO-252 |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ON |
23+ |
TO-252 |
995 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON(安森美) |
23+ |
17728 |
公司只做原裝正品,假一賠十 |
詢價 |
