MTB6N60中文資料Motorola數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTB6N60規(guī)格書詳情
TMOS E-FET? High Energy Power FET D2PAK-SL Straight Lead
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Short Heatsink Tab Manufactured — Not Sheared
? Specially Designed Leadframe for Maximum Power Dissipation
產(chǎn)品屬性
- 型號(hào)：
MTB6N60
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 6.0 AMPERES 600 VOLTS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
TO220 |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-263 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
21+ |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | |||
23+ |
SMD |
12000 |
正品原裝貨價(jià)格低qq:2987726803 |
詢價(jià) | |||
ON |
23+ |
TO-263 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
ON |
23+ |
TO-263 |
6893 |
詢價(jià) | |||
MOT |
2315+ |
3866 |
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價(jià) | |||
MOT |
23+24 |
SOT263 |
17154 |
專業(yè)經(jīng)營(yíng)各種場(chǎng)效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC |
詢價(jià) | ||
MOTOROLA |
2020+ |
TO-263 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) |
