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MTB30P06VG

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB30P06VG

Power MOSFET 30 Amps, 60 Volts P??hannel D2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTBV30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP30P06

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP30P06V

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP30P06V

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP30P06V

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTP30P06VG

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCE30P06J

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

RFG30P06

30A,60V,0.065Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    MTB30P06VG

  • 制造商：

    ON Semiconductor

  • 功能描述：

    Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON SEMICONDUCTOR
24+
D2-PAK
15800
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購!
 詢價(jià)
ON
24+
TO-263
143
詢價(jià)
ON
24+
TO-263
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
 詢價(jià)
ON
2020+
TO-263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
ON
22+
TO-263
3000
原裝正品,支持實(shí)單
 詢價(jià)
ON/安森美
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ON/安森美
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
ON/安森美
22+
TO-263
24390
詢價(jià)
ON
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
ON
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價(jià)
更多MTB30P06VG供應(yīng)商 更新時(shí)間2025-2-7 14:00:00

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