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MTB30N06VL中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MTB30N06VL
廠商型號

MTB30N06VL

功能描述

TMOS POWER FET 30 AMPERES 60 VOLTS

文件大小

262.43 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-4-1 16:38:00

人工找貨

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MTB30N06VL規(guī)格書詳情

TMOS V? Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM

TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour

50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.

New Features of TMOS V

? On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low RDS(on)Technology

? Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

? Avalanche Energy Specified

? IDSSand VDS(on)Specified at Elevated Temperature

? Static Parameters are the Same for both TMOS V and TMOS E–FET

產(chǎn)品屬性

  • 型號:

    MTB30N06VL

  • 制造商:

    ON Semiconductor

  • 功能描述:

    Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail

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