| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MT48 | PATCHBAYS | SWITCH Switch Publishing Co.，Ltd. | SWITCH | |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
MOBILE SDRAM GENERALDESCRIPTION The256MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456bits.ItisinternallyconfiguredasaquadbankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex16’s67,108,8 | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron |
詳細(xì)參數(shù)
- 型號(hào)：
MT48
- 制造商：
SWITCH
- 制造商全稱(chēng)：
Switchcraft, Inc.
- 功能描述：
PATCHBAYS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICRON/美光 |
21+ |
BGA |
10 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
MICRON |
23+24 |
TSOP |
9680 |
原盒原標(biāo).進(jìn)口原裝.支持實(shí)單 .價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
MICEON |
22 |
TSOP54 |
15000 |
3月31原裝,微信報(bào)價(jià) |
詢(xún)價(jià) | ||
MICRON |
TSOP |
256 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢(xún)價(jià) | |||
Micron |
22+ |
NA |
1415 |
原裝正品支持實(shí)單 |
詢(xún)價(jià) | ||
MICRON/鎂光 |
2022+ |
253 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
MICRON |
24+ |
TSOP-54 |
18998 |
專(zhuān)業(yè)代理SDRAM1X16 |
詢(xún)價(jià) | ||
MICRON |
22+ |
5230 |
36872339 |
原裝 |
詢(xún)價(jià) | ||
Micron Technology |
22+ |
2000 |
原裝現(xiàn)貨 支持實(shí)單 |
詢(xún)價(jià) | |||
MICRON |
23+ |
TSOP |
10000 |
公司只做原裝,假一罰十 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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