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MT28F008B3

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9BET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3SG-9TET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9BET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9T

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3VG-9TET

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT28F008B3WG-9B

FLASH MEMORY

GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha

MicronMicron Technology

鎂光美國鎂光科技有限公司

詳細參數(shù)

  • 型號:

    MT28F008B3

  • 制造商:

    MICRON

  • 制造商全稱:

    Micron Technology

  • 功能描述:

    FLASH MEMORY

供應商型號品牌批號封裝庫存備注價格
24+
5000
公司存貨
詢價
N/A
2339+
TSSOP
5632
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
SAMSUNG
23+
TSOP
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
SAMSUNG
34
TSOP
416
原裝正品
詢價
N/A
22+
TSSOP
25000
只有原裝原裝,支持BOM配單
詢價
MICRON
2020+
TSOP
937
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
MICRON
23+
DIP-8P
5000
原裝正品,假一罰十
詢價
MICRO
2016+
SOP
3000
主營TI,絕對原裝,假一賠十,可開17%增值稅發(fā)票!
詢價
MICRON
24+
TSOP
4650
詢價
MT
TSOP40
26300
全新原裝進口自己庫存優(yōu)勢
詢價
更多MT28F008B3供應商 更新時間2025-1-28 16:00:00