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NTE5827

SiliconPowerRectifierDiode,50Amp

Description: TheNTE5826thruNTE5829aresiliconpowerrectifierdiodesinapress–fittypepackagedesignedforuseinallmedium–currentapplicationsorforhighercurrentindustrialalternatorsandchassismountedpowersupplyrectifiers. Features: ●50Amp@TC=+150°C ●600

NTE

NTE Electronics

PN5827

SmallSignalTransistors

SmallSignalTransistors TO-92Case(Continued)

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

PT5827

16-A12-VInputAdjustableIntegratedSwitchingRegulator

TITexas Instruments

德州儀器美國德州儀器公司

REFD5827

Petaluma(MAXREFDES30#):8-ChannelSimultaneous-SamplingAnalogFrontEnd

MaximMaxim Integrated Products

美信美信半導(dǎo)體

SZ5827

5.0WATT6.8-270VOLTSZENERDIODES

SSDI

Solid States Devices, Inc

TAS5827

TAS582747-WStereo,DigitalInput,HighEfficiencyClosed-LoopClass-DAmplifierwithClass-HAlgorithm

1Features ?Supportsmultipleoutputconfigurations –2×57-W,BTLMode(6-Ω,25-V,THD+N=10) –2×55-W,BTLMode(4-Ω,21-V,THD+N=10) –2×47-W,BTLMode(6-Ω,25-V,THD+N=1) –2×45-W,BTLMode(4-Ω,21-V,THD+N=1) –1×112-W,PBTLMode(3-Ω,25-V, THD+N=10) –1×94-W,PBTLMode(3-Ω,

TI1Texas Instruments

德州儀器美國德州儀器公司

TAS5827RHBR

TAS582747-WStereo,DigitalInput,HighEfficiencyClosed-LoopClass-DAmplifierwithClass-HAlgorithm

1Features ?Supportsmultipleoutputconfigurations –2×57-W,BTLMode(6-Ω,25-V,THD+N=10) –2×55-W,BTLMode(4-Ω,21-V,THD+N=10) –2×47-W,BTLMode(6-Ω,25-V,THD+N=1) –2×45-W,BTLMode(4-Ω,21-V,THD+N=1) –1×112-W,PBTLMode(3-Ω,25-V, THD+N=10) –1×94-W,PBTLMode(3-Ω,

TI1Texas Instruments

德州儀器美國德州儀器公司

UZ5827

POWERZENERS5WATT

POWERZENERS5WATT AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

UZ5827

POWERZENERS

DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES ?2TimesGreaterSurgeRatingthanConventional10WattZeners ?SmallPhysicalSize

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

UZ5827

ElectricalSpecificationsat25oC

ZenerDiodes ElectricalSpecificationsat25°C

AMMSEMIAmerican Microsemiconductor

美國微半導(dǎo)體有限公司

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