首頁 >MSAFZ15N40A>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

15N40

15A,400VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC15N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalan

UTCUnisonic Technologies

友順友順科技股份有限公司

15N40K-MT

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

DAM15N40S

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FDP15N40

N-ChannelMOSFET400V,15A,0.3廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP15N40

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDPF15N40

N-ChannelMOSFET400V,15A,0.3廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FGR15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGS15N40L

ElectricalCharacteristicsofIGBT

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGS15N40L

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGS15N40LTF

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGW15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MGB15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGB15N40CL

IgnitionIGBT15Amps,410Volts

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGC15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGP15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGP15N40CL

IgnitionIGBT15Amps,410Volts

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGP15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGP15N40CLG

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號:

    MSAFZ15N40A

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    TRANS MOSFET N-CH 15A 3PIN COOLPACK1 - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
VB
2019
NA
55000
絕對原裝正品假一罰十!
詢價
CTC
23+
SIP
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
ITT
ROHS
13352
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
Panasonic
2010+
N/A
66
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
PANASONIC
20+
傳感器
396
就找我吧!--邀您體驗愉快問購元件!
詢價
Panasonic
23+
NA
13826
確保原裝正品,專注終端客戶一站式BOM配單
詢價
PANASONIC
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
Panasonic
5
全新原裝 貨期兩周
詢價
Panasonic
2022+
1
全新原裝 貨期兩周
詢價
信盛
24+
connector
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
詢價
更多MSAFZ15N40A供應(yīng)商 更新時間2024-10-24 11:30:00