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MRFG35010

Gallium Arsenide PHEMT RF Power Field Effect Transistor

GalliumArsenidePHEMTRFPowerFieldEffectTransistor DesignedforWLL/MMDSorUMTSdriverapplicationswithfrequenciesfrom1.8to3.6GHz.DeviceisunmatchedandissuitableforuseinClassABorClassAlinearbasestationapplications. ?TypicalW?CDMAPerformance:?42dBcACPR,3.55GH

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRFG35010

包裝:散裝 封裝/外殼:NI-360HF 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 15V 3.55GHZ NI360HF

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

MRFG35010ANT1

Gallium Arsenide PHEMT

3.5GHz,9W,12VPOWERFETGaAsPHEMT DesignedforWLL/MMDS/BWAorUMTSdriverapplications.Characterizedfrom500to5000MHz.DeviceisunmatchedandissuitableforuseinClassABCustomerPremiseEquipment(CPE)applications. ?TypicalSingle-CarrierW-CDMAPerformance:VDD=12Volts,I

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRFG35010AR1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

GalliumArsenidePHEMTRFPowerFieldEffectTransistor DesignedforWiMAX,WLL/MMDSorUMTSdriverandfinalapplications.Characterizedfrom500to5000MHz.DeviceisunmatchedandissuitableforuseinClassABorClassAlinearbasestationapplications. ?TypicalSingle-CarrierW-CDMAPer

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRFG35010MT1

Gallium Arsenide PHEMT

3.5GHz,9W,12VPOWERFETGaAsPHEMT DesignedforWLL/MMDS/BWAorUMTSdriverapplicationswithfrequenciesfrom1.8to3.6GHz.DeviceisunmatchedandissuitableforuseinClassABlinearbasestationapplications. ?TypicalW-CDMAPerformance:-42dBcACPR,3.55GHz,12Volts,IDQ=180

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRFG35010MT1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

GalliumArsenidePHEMTRFPowerFieldEffectTransistor DesignedforWLL/MMDS/BWAorUMTSdriverapplicationswithfrequenciesfrom1.8to3.6GHz.ThisdeviceisunmatchedandissuitableforuseinClassABlinearbasestationapplications. ?TypicalW-CDMAPerformance:-42dBcACPR,3.55GHz,

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRFG35010N

RF Power Field Effect Transistor

GalliumArsenidePHEMTRFPowerFieldEffectTransistor DesignedforWLL/MMDS/BWAorUMTSdriverapplicationswithfrequenciesfrom1.8to3.6GHz.ThisdeviceisunmatchedandissuitableforuseinClassABlinearbasestationapplications. ?TypicalW-CDMAPerformance:-42dBcACPR,3.55GHz,

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRFG35010NT1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

GalliumArsenidePHEMTRFPowerFieldEffectTransistor DesignedforWLL/MMDS/BWAorUMTSdriverapplicationswithfrequenciesfrom1.8to3.6GHz.ThisdeviceisunmatchedandissuitableforuseinClassABlinearbasestationapplications. ?TypicalW-CDMAPerformance:-42dBcACPR,3.55GHz,

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRFG35010R1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5GHz,10W,12VPOWERFETGaAsPHEMT DesignedforWLL/MMDSorUMTSdriverapplicationswithfrequenciesfrom1800to3600MHz.DeviceisunmatchedandissuitableforuseinClassABorClassAlinearbasestationapplications. ?TypicalW-CDMAPerformance:-42dBcACPR,3.55GHz,12Volts,

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRFG35010A

Gallium Arsenide PHEMT RF Power Field Effect Transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MRFG35010AN

Gallium Arsenide pHEMT RF Power Field Effect Transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MRFG35010ANT1

Gallium Arsenide pHEMT RF Power Field Effect Transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MRFG35010AR1

Gallium Arsenide PHEMT RF Power Field Effect Transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MRFG35010ANT1

包裝:托盤 封裝/外殼:PLD-1.5 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 15V 3.55GHZ PLD-1.5

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

MRFG35010AR1

包裝:卷帶(TR) 封裝/外殼:NI-360HF 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:FET RF 15V 3.55GHZ NI360HF

NXP USA Inc.

NXP USA Inc.

NXP USA Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MRFG35010

  • 制造商:

    NXP USA Inc.

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻

  • 包裝:

    散裝

  • 晶體管類型:

    pHEMT FET

  • 頻率:

    3.55GHz

  • 增益:

    10dB

  • 功率 - 輸出:

    9W

  • 封裝/外殼:

    NI-360HF

  • 供應(yīng)商器件封裝:

    NI-360HF

  • 描述:

    FET RF 15V 3.55GHZ NI360HF

供應(yīng)商型號品牌批號封裝庫存備注價格
MOTOROL
2020+
*
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
MOTOROL
2020+
*
1
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
FREESCALE
24+
NI-360S
125
詢價
Freescale
24+
NI-360HF
60
原裝現(xiàn)貨假一罰十
詢價
FREESCALE
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
MOTOROLA
22+
原廠原封
5000
原裝現(xiàn)貨庫存.價格優(yōu)勢
詢價
FREESCALE
24+
原裝
2789
全新原裝自家現(xiàn)貨!價格優(yōu)勢!
詢價
FREESCALE
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
詢價
FSL
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
NXP
22+
NI360HF
9000
原廠渠道,現(xiàn)貨配單
詢價
更多MRFG35010供應(yīng)商 更新時間2025-1-14 22:30:00