MRFE6VP61K25H分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

? Typical Performance: VDD = 50 Volts, IDQ = 100 mA

Features

? Unmatched Input and Output Allowing Wide Frequency Range Utilization

? Device can be used Single--Ended or in a Push--Pull Configuration

? Qualified Up to a Maximum of 50 VDD Operation

? Characterized from 30 V to 50 V for Extended Power Range

? Suitable for Linear Application with Appropriate Biasing

? Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation

? Characterized with Series Equivalent Large--Signal Impedance Parameters

? In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.