MRF5S9101NBR1分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

廠商型號	MRF5S9101NBR1
參數(shù)屬性	MRF5S9101NBR1 封裝/外殼為TO-272BB；包裝為托盤；類別為分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻；產(chǎn)品描述：FET RF 68V 960MHZ TO-272-4
功能描述	RF Power Field Effect Transistors
封裝外殼	TO-272BB
文件大小	541.64 Kbytes
頁面數(shù)量	20 頁
生產(chǎn)廠商	Freescale Semiconductor, Inc
企業(yè)簡稱	freescale【飛思卡爾】
中文名稱	飛思卡爾半導體官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-4-23 13:58:00
人工找貨	MRF5S9101NBR1價格和庫存，歡迎聯(lián)系客服免費人工找貨

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

GSM Application

? Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =

100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain - 17.5 dB

Drain Efficiency - 60

GSM EDGE Application

? Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =

50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)

Power Gain — 18 dB

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 2.3 rms

? Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW Output Power

Features

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Internally Matched for Ease of Use

? Qualified Up to a Maximum of 32 VDD Operation

? Integrated ESD Protection

? 200°C Capable Plastic Package

? N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

? In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.