MRF372R5分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

470-860 MHz, 180 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 32 volt transmitter equipment.

? Typical Narrowband Two-Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts

Output Power — 180 Watts PEP

Power Gain — 17 dB

Efficiency — 36

IMD — -35 dBc

? Typical Broadband Two-Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts

Output Power — 180 Watts PEP

Power Gain — 14.5 dB

Efficiency — 37

IMD — -31 dBc

? Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output Power

Features

? Internally Matched for Ease of Use

? Integrated ESD Protection

? Excellent Thermal Stability

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.