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MMF

Low profile package

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨啟半導(dǎo)體上海晨啟半導(dǎo)體有限公司

MMF

包裝:袋 類別:RF/IF,射頻/中頻和 RFID RF 配件 描述:M-MOUNT, HIGH FREQUENCY (\u003e1 GHZ)

PCTEL, Inc.

PCTEL, Inc.

PCTEL, Inc.

MMF200S170DA

1700V 200A FRED Module

PRODUCTFEATURES ?UltrafastReverseRecoveryTime ?SoftReverseRecoveryCharacteristics ?LowReverseRecoveryLoss ?LowForwardVoltage ?HighSurgeCurrentCapability ?LowInductancePackage APPLICATIONS ?InversionWelder ?UninterruptiblePowerSupply(UPS) ?PlatingPowerSuppl

MACMICMacMic

宏微科技江蘇宏微科技股份有限公司

MMF200S170DA2B

1700V 200A FRED Module

PRODUCTFEATURES ?UltrafastReverseRecoveryTime ?SoftReverseRecoveryCharacteristics ?LowReverseRecoveryLoss ?LowForwardVoltage ?HighSurgeCurrentCapability ?LowInductancePackage APPLICATIONS ?InversionWelder ?UninterruptiblePowerSupply(UPS) ?PlatingPowerSuppl

MACMICMacMic

宏微科技江蘇宏微科技股份有限公司

MMF2X100J120D6B

1200V 200A FRED Module

PRODUCTFEATURES ??UltrafastRecoveryTime ??LowRecoveryLoss ??SoftReverseRecoveryCharacteristics ??LowLeakageCurrent ??PopularSOT-227Package APPLICATIONS ??InversionWelder ??UninterruptiblePowerSupply ??PlatingPowerSupply ??UltrasonicCleanerandWelder ??Converter&Ch

MACMICMacMic

宏微科技江蘇宏微科技股份有限公司

MMF300S060DK

FRED Module

FEATURES ·HighSurgeCurrentCapability ·UltrafastReverseRecoveryTime ·SoftReverseRecoveryCharacteristics ·LowReverseRecoveryLoss ·LowFowardVoltage APPLICATIONS ·UPS ·InversionWelder ·PlatingPowerSupply

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF300S120DK2B

FRED Module

FEATURES ·SoftReverseRecoveryCharacteristics ·UltrafastReverseRecoveryTime ·LowReverseRecoveryLoss ·LowFowardVoltage ·HighSurgeCurrentCapability APPLICATIONS ·UPS ·InversionWelder ·PlatingPowerSupply

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF50R280PTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R115PTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=33A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.115Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R190PTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R190QTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R190R

600V 0.19? N-channel MOSFET

?Description MMF60R190RispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Thisdevicecombinesimprovementofswitching speedwitheffectiveswitchingbehavior.Anditalsowillprovidemuchhighefficiencybyusing o

MGCHIP

MagnaChip Semiconductor.

MMF60R190RTH

600V 0.19? N-channel MOSFET

?Description MMF60R190RispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Thisdevicecombinesimprovementofswitching speedwitheffectiveswitchingbehavior.Anditalsowillprovidemuchhighefficiencybyusing o

MGCHIP

MagnaChip Semiconductor.

MMF60R280QTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13.8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R290PTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R360PTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R360RZ

600V 0.36? N-channel MOSFET

?Description MMF60R360RZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Thisdevicecombinesimprovementofswitching speedwitheffectiveswitchingbehavior.Anditalsowillprovidemuchhighefficiencybyusing

MGCHIP

MagnaChip Semiconductor.

MMF60R360RZTH

600V 0.36? N-channel MOSFET

?Description MMF60R360RZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Thisdevicecombinesimprovementofswitching speedwitheffectiveswitchingbehavior.Anditalsowillprovidemuchhighefficiencybyusing

MGCHIP

MagnaChip Semiconductor.

MMF60R580PTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R580QTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    MMF

  • 制造商:

    PCTEL, Inc.

  • 類別:

    RF/IF,射頻/中頻和 RFID > RF 配件

  • 系列:

    MMF

  • 包裝:

  • 配件類型:

    安裝

  • 配套使用/相關(guān)產(chǎn)品:

    MMF 系列

  • 描述:

    M-MOUNT, HIGH FREQUENCY (\u003e1 GHZ)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Amphenol
23+
NA
2559
確保原裝正品,專注終端客戶一站式BOM配單
詢價(jià)
MOT
23+
SOR22
7512
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購!
詢價(jià)
ST/DIOTEC
20+
SOT-23
43000
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
ON
1415+
SOT-223
28500
全新原裝正品,優(yōu)勢(shì)熱賣
詢價(jià)
MOTOROLA
23+
TRAMS
9526
詢價(jià)
ON
24+
90000
詢價(jià)
13+
SOT-223
7500
特價(jià)熱銷現(xiàn)貨庫存
詢價(jià)
ST
19+
SOT-23
84829
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
ON
1708+
?
7500
只做原裝進(jìn)口,假一罰十
詢價(jià)
MOT
05+
原廠原裝
551
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
更多MMF供應(yīng)商 更新時(shí)間2024-11-17 11:16:00