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MMDT8050S

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION TheUTCMMDT8050SisaDualNPNepitaxialplanartransistor.IthaslowVCE(sat)performance,andthetransistorelementsareindependent,eliminatinginterference. FEATURES *LowVCE(sat),VCE(sat)=40mV(typ.)@IC/IB=50mA/2.5mA *Transistorelementsareindependent,elimi

UTCUnisonic Technologies

友順友順科技股份有限公司

MMDT8050SG-AL6-R

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION TheUTCMMDT8050SisaDualNPNepitaxialplanartransistor.IthaslowVCE(sat)performance,andthetransistorelementsareindependent,eliminatinginterference. FEATURES *LowVCE(sat),VCE(sat)=40mV(typ.)@IC/IB=50mA/2.5mA *Transistorelementsareindependent,elimi

UTCUnisonic Technologies

友順友順科技股份有限公司

MMDT8050SL-AL6-R

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION TheUTCMMDT8050SisaDualNPNepitaxialplanartransistor.IthaslowVCE(sat)performance,andthetransistorelementsareindependent,eliminatinginterference. FEATURES *LowVCE(sat),VCE(sat)=40mV(typ.)@IC/IB=50mA/2.5mA *Transistorelementsareindependent,elimi

UTCUnisonic Technologies

友順友順科技股份有限公司

MMDT8050S_15

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

MMS8050-H

NPNSiliconPlastic-EncapsulateTransistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?SOT-23Plastic-EncapsulateTransistors ?Capableof0.3Watts(Tamb=25°C)ofPowerDissipation. ?Collector-current0.5A ?Collector-baseVoltage40V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?Mar

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMS8050-H

NPNSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMS8050-L

NPNSiliconPlastic-EncapsulateTransistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?SOT-23Plastic-EncapsulateTransistors ?Capableof0.3Watts(Tamb=25°C)ofPowerDissipation. ?Collector-current0.5A ?Collector-baseVoltage40V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?Mar

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMS8050-L

NPNSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050-H

NPNSiliconPlastic-EncapsulateTransistor

Features ?SOT-23Plastic-EncapsulateTransistors ?Capableof0.3Watts(Tamb=25°C)ofPowerDissipation. ?Collector-current1.5A ?Collector-baseVoltage40V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?Marking:Y1 ?CaseMaterial:MoldedPlastic.ULFlammability

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050-H

NPNSiliconPlastic-EncapsulateTransistorCollector-baseVoltage40V

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050-H

NPNSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050-L

NPNSiliconPlastic-EncapsulateTransistor

Features ?SOT-23Plastic-EncapsulateTransistors ?Capableof0.3Watts(Tamb=25°C)ofPowerDissipation. ?Collector-current1.5A ?Collector-baseVoltage40V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?Marking:Y1 ?CaseMaterial:MoldedPlastic.ULFlammability

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050-L

NPNSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050W-H

NPNSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050W-J

NPNSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMSS8050W-L

NPNSiliconPlastic-EncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MOC8050

6-PinDIPOptoisolatorsDarlingtonOuput(NoBaseConnection)

TheMOC8030andMOC8050devicesconsistofgalliumarsenideinfraredemittingdiodesopticallycoupledtomonolithicsiliconphotodarlingtondetectors.ThechiptoPin6baseconnectionhasbeeneliminatedtoimproveoutputperformanceinhighnoiseenvironments. Theyarebestsuitedforuseina

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MOC8050

PHOTODARLINGTONOPTOCOUPLERSPreliminary

QT

QT Brightek (QTB)

MOC8050

PHOTODARLINGTONOPTOCOUPLERS(NOBASECONNECTION)

DESCRIPTION TheMOC8030andMOC8050arephotodarlington-typeopticallycoupledoptocouplers.Thedeviceshaveagalliumarsenideinfraredemittingdiodecoupledwithasilicondarlingtonphototransistor. FEATURES ?HighBVCEO -Minimum80V ?Highcurrenttransferratio -300(MOC8030)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MOC8050

PHOTODARLINGTONOPTOCOUPLER

DESCRIPTION TheMOC8050isanopticallycoupledisolatorwithaGalliumArsenideinfraredemitterandasiliconphotodarlingtonsensor.Switchingcanbeachievedwhilemaintainingahighdegreeofisolationbetweendrivingandloadcircuits,withnocrosstalkbetweenchannels.Theseoptocouplers

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    MMDT8050S

  • 制造商:

    UTC-IC

  • 制造商全稱:

    UTC-IC

  • 功能描述:

    LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
UTC
20232024
SOT363
6000
老牌代理,長(zhǎng)期現(xiàn)貨
詢價(jià)
NK/南科功率
23+
SOT-23-6
360000
交期準(zhǔn)時(shí)服務(wù)周到
詢價(jià)
CJ
2020+
SOT-363
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
長(zhǎng)電
22+23+
SOT-363
24471
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
長(zhǎng)電
2020+
SOT-363
81000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
CJ/長(zhǎng)電
22+
SOT-363
75000
原裝正品現(xiàn)貨,可開13點(diǎn)稅
詢價(jià)
24+
SOT-363
65300
一級(jí)代理/放心購(gòu)買!
詢價(jià)
CJ/長(zhǎng)電
21+
SOT-363
300000
長(zhǎng)期代理優(yōu)勢(shì)供應(yīng)CJ長(zhǎng)電晶體管
詢價(jià)
CJ/長(zhǎng)電
22+
SOT-363
15240
原裝正品
詢價(jià)
CJ/長(zhǎng)電
22+
SOT-363
162000
只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多MMDT8050S供應(yīng)商 更新時(shí)間2025-1-17 15:00:00