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MMD80R900PCRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD80R900PCRH

800V 0.9(ohm) N-channel MOSFET

MGCHIP

MagnaChip Semiconductor.

MMD80R900PRH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD80R900PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD80R900QZ

800V0.90?N-channelMOSFET

?Description MMD80R900QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MGCHIP

MagnaChip Semiconductor.

MMD80R900QZRH

800V0.90?N-channelMOSFET

?Description MMD80R900QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MGCHIP

MagnaChip Semiconductor.

MMF80R900P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF80R900P

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PB

800V0.9ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PBTH

800V0.9ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PC

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PCTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF80R900PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF80R900PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF80R900PTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP80R900PC

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP80R900PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMP80R900PCTH

800V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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24+
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5000
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2018+
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6528
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MAGNACHIP
22+23+
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75048
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2048+
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9852
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MAGNACHIP/美格納
23+
TO-252
10000
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MAGNACHIP/美格納
23+
TO-252
50000
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MAGNACHIP/美格納
24+
TO-252
7500
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MAGNACHIP
TO-252
22+
6000
十年配單,只做原裝
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SOT-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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23+
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13000
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更多MMD80R900PCRH供應(yīng)商 更新時(shí)間2024-11-16 10:20:00